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| SP4T Monolithic PIN Diode Switch V 1.00 MA4SW410 Features n n n n Outline Drawing Ultra Broad Bandwidth : 50 MHz to 26 GHz 0.9 Insertion Loss , 34 dB Isolation at 20 GHz 50 ns Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW410 is a SP4T Series-Shunt Broad Band Switch made with M/A-COM's Unique HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form Series and Shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 50 nS Switching Speeds are Achieved. Nominal Die Dimensions Inches Dim A B C D Nominal .066 .047 .054 .012 .043 .009 .004 .004 .033 .061 Millimeters Nominal 1.67 1.17 1.37 0.31 1.08 0.22 0.11 0.11 0.84 1.56 Absolute Maximum Ratings 1 E F G H I J @ TA = +25 C (unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) Bias Current Forward Applied Voltage (Reverse) Value -65 C to +125 C 65 C to +150 C + 30 dBm +/-50 mA 25 Volts Note: Bond Pads are 0.12 mm x 0.12 mm 1. Exceeding any of these values may result in permanent damage SP4T PIN Diode Switch Electrical Specifications @ TA = + 25 C, +/- 20 mA Bias Current (On-Wafer Measurements) Parameters Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed1 MA4SW410 V 1.00 Frequency 20 GHz 20 GHz 20 GHz 20 GHz 10 GHz Minimum Nominal 0.9 Maximum 1.3 Units dB dB dB dB nS 28 34 15 15 50 1. Typical Switching Speed is measured from 10 % to 90 % of Detected RF Voltage driven by a TTL compatible driver. Driver Output Parallel RC Network uses a Capacitor between 390 - 560 pF and a Resistor between 150 - 220 Ohms to achieve 50 nS Rise and Fall Times. Typical Driver Connections Control Level (DC Current) at Port J2 -20 mA J3 +20 mA J4 +20 mA J5 +20 mA Condition of RF Output J1-J2 Low Loss Condition of RF Output J1-J3 Isolation Condition of RF Output J1-J4 Isolation Condition of RF Output J1-J5 Isolation +20 mA +20 mA -20 mA +20 mA +20 mA -20 mA +20 mA +20 mA Isolation Isolation Low Loss Isolation Isolation Low Loss Isolation Isolation +20 mA +20 mA +20 mA -20 mA Isolation Isolation Isolation Low Loss 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch Assembly Considerations The following precautions should be observed for successful assembly of the die. MA4SW410 V 1.00 Eutectic Die Attachment An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature of 255 oC and a tool tip temperature of 265 oC. When hot gas is applied, the tool tip temperature should be 290 oC. The chip should not be exposed to temperatures greater than 320 oC for more than 20 seconds. No more than three seconds should be required for the attachment. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Electro-Static Sensitivity The MA4SW Series PIN switches are ESD, Class 1 sensitive. The proper ESD handling procedures should be used. Electrical Epoxy Die Attachment Assembly should be preheated to 125-150 oC. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule. Die Wire Bonding Thermosonic wedge wire bonding using 1/4 x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature of 150 oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible. Die Mounting These chips have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive Ag epoxy. Mounting surface must be clean and flat. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch Typical Microwave Performance MA4SW410 TYPICAL INSERTION LOSS 0.0 -0.2 -0.4 -0.6 Loss (dB) -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0.0 5.0 10.0 15.0 Frequency (GHz) J1-J2 J1-J3 J1-J4 J1-J5 MA4SW410 V 1.00 20.0 25.0 30.0 MA4SW410 TYPICAL INPUT RETURN LOSS 0 -10 R. Loss (dB) -20 -30 -40 -50 -60 0 5 10 15 Frequency (GHz) J1-J2 J1-J3 J1-J4 J1-J5 20 25 30 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch Typical Microwave Performance MA4SW410 TYPICAL OUTPUT RETURN LOSS 0 -5 -10 R. Loss(dB) MA4SW410 V 1.00 -15 -20 -25 -30 -35 0 5 10 15 Frequency (GHz) J2 J3 J4 J5 20 25 30 MA4SW410 TYPICAL ISOLATION 0 -10 -20 Isolation (dB) -30 -40 -50 -60 -70 -80 -90 0 5 10 15 Frequency (GHz) J1-J2 J1-J3 J1-J4 J1-J5 20 25 30 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch Operation of the MA4SW410 Switch MA4SW410 V 1.00 Operation of the MA4SW Series of PIN Switches is achieved by the Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Switching Ports as shown in Figure1. The Backside Area of the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. The DC Control Currents should be supplied by Constant Current Sources. The voltages at these points will not exceed + 1.5 volts (1.2 volts typical) for Supply Currents up to + 50 mA. In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation. Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return Path, ( J1 ). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard , +/-5 V TTL Controlled PIN Diode Driver. A Typical DC Bias Schematic for 2-18 GHz Operation is shown in Figure 1. Figure 1:2 - 18 GHz Bias Network J1 39 pF 22 pF DC Bias 22 nH 39 pF 100 ohms 22 nH J5 22 pF J2 J4 J3 HMIC Switch Die 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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